FOR IMMEDIATE RELEASE
Innodisk
Launches New 16GB DDR4 Memory Modules for Embedded Systems and Servers
High
Capacity Unbuffered DRAM Modules Unlock Higher Performance for
Memory-constrained Embedded and Industrial Applications
August
12, 2015, Fremont, CA – Innodisk,
the service-driven flash and DRAM provider, announces higher capacity
16GB versions of its DDR4 embedded and server unbuffered DRAM series.
These 2133MHz UDIMMs and SODIMMS now come in industry-leading 16GB
capacities, allowing more memory to be installed within space
constrained embedded systems, industrial PCs and servers. Offering
higher performance with lower power consumption compared to DDR3, the
new DRAM modules have ECC available for reliability, as well as
industrial strength features from Innodisk such as 30µ” Gold Finger
connectors, thermal sensors, and protective conformal coatings. The new
16GB modules make Innodisk’s range of DDR4 products the most complete
line of embedded and server DDR4 memory on the market.
“16GB is the highest
capacity unbuffered DDR4 module available on the
market,” said Samson Chang, Vice President of Embedded
DRAM Business
Unit of Innodisk. “We’re
proud that Innodisk is able to provide this
memory capacity while bringing the performance and low power benefits
of DDR4 to the embedded and server markets. In addition, we’re bringing
extra value to our industrial customers with Innodisk features like
onboard thermal sensors and protective coatings. “
Improved
Memory Performance at Lower Voltage
With up to 30% better performance with 20% lower power consumption
compared to DDR3 memory, Innodisk’s unbuffered DDR4 modules and are a
natural fit for the embedded industry. At 1.2V they use even less power
than the 1.35V DDR3L Low Voltage standard. With the advent of the Intel
Skylake platform, Innodisk’s 16GB DDR4 UDIMMs and SO-DIMMs will unlock
higher performance for memory-constrained embedded and server
applications.
Reliable
Industrial Strength Technology
With enhanced error detection and handling capabilities including
parity error detection and Cyclic Redundancy Check (CRC), DDR4 improves
memory reliability. In addition, Innodisk’s 16GB DDR4 modules are
infused with its industrial know-how, including robust connectors,
thermal sensors, and conformal coatings. An extra proprietary 30µ”
Golden Finger connector is 10 times thicker than the JEDEC standard,
creating an extra-reliable interface. Thermal sensors on the module
alert the system to temperature changes, preventing overheating.
Protective conformal coatings are available to guard against a variety
of physical and chemical contaminants.
Features
- Standard
profile height of 30.0mm for SODIMM, and 31.25mm for UDIMM
- ECC
available for data integrity
- Single
voltage 1.2V
- Improved
airflow
- On-Die
Termination
- Lead-Free
and compliant with RoHS
- Average
refresh period of 7.8us at 85°C or lower, and 3.9us between 85°C and
95°C
For
more details visit Innodisk’s DRAM product pages:
About
Innodisk
Innodisk is a service driven provider of flash and DRAM products for
the industrial and enterprise applications. With satisfied customers
across the embedded, aerospace and defense, cloud storage markets and
more, we have set ourselves apart with a commitment to dependable
products and unparalleled service. This has resulted in products
including embedded peripherals designed to supplement existing
industrial solutions and high IOPS flash arrays for industrial and
enterprise applications. The expanded business lines are leading our
next step in being a comprehensive solution and service provider in
industrial storage industry.
Founded in 2005 and headquartered in Taipei, Taiwan with engineering
support and sales teams in China, Europe, Japan, and the United States,
Innodisk is able to support clients globally. With abundant experience
and an unrivaled knowledge of the memory industry, Innodisk develops
products with excellent quality, remarkable performance, great
cost-efficiency, and the highest reliability. For more information
about Innodisk, please visit http://www.innodisk.com/.